Radian RMS-200/8G PCIe NVMe I/O Acceleratorfor ZFS slog or cache
This device is a DDR3 DRAM based NVRAM device. The NVRAM controller presents as a block device via NVMe PCIe 3.0 x8 interface. The DDR3 data is protected by ultra-capacitors that will write the data content to NAND flash upon power loss. You basically get DDR3 performance as a 8GB block storage device that has power loss protection! Great for use as a ZFS slog device, or for I/O acceleration applications.
Performance:Write Throughput: 5 GB/s
Random 4K Write IOPS: 900KRead Throughput: 5.2 GB/s
Random 4K Read IOPS: 1 Mil.
Capacity: 8GBSpecifications:
DRAM ECC: 64-bit data/8-bit ECC code detects double bit errors and corrects single bit errorswith error injection test function.
NAND Flash: Fault Tolerant architecture with up to 32GB of SLC NAND Flash for storing data onsystem/power failure and ensuring data integrity
NVMe DMA Engines: Supports NVMe command set, submission/completion queues, and MSI-Xvector interruptsUltracapacitor Recharge Time: 57 SecondsPower Requirement (+12V Rail) Typical Maximum: 15.5W @ 55°C